By spin-coating silver nanowires (AgNWs) and polymethyl methacrylate (PMMA), applying pressure imprint and plasma treatment, we obtained flat AgNW thin film with a sheet resistance of 20 Ω/sq and a transmittance of 78% at 550 nm with low surface roughness. No significant change in sheet resistance was observed after cyclic bending (bending radius is 5 mm) test and tape test. After 1 000 bending tests, the change rate of sheet resistance was only 8.3%. The organic light-emitting devices (OLEDs) were prepared by using such AgNW electrodes and a maximum brightness of 5 090 cd/mm² was obtained. Compared with the AgNWs electrode without any treatment, the present AgNW electrodes have lower sheet resistance and better hole injection. Our results show spin-coated with flat layers, embossed and plasma-treated AgNW electrodes are suitable for manufacturing flexible organic optoelectronic devices.

In this paper, co-doping method is used to improve the current efficiency of solution-processed organic light-emitting diodes (OLEDs). By changing the ratio of two thermally activated delayed fluorescent (TADF) emitters, we studied the performance of device and its mechanism. A solution processed OLED with a structure of indium tin oxide (ITO, 150 nm)/PEDOT:PSS (30 nm)/CBP:4CzIPN-x%:4CzPN-y% (30 nm)/TPBi (40 nm)/LiF (1 nm)/Al (100 nm) was fabricated. The current efficiencies of 26.6 cd/A and 26.4 cd/A were achieved by the devices with dopant ratio of 6% 4CzIPN:2% 4CzPN and 2% 4CzIPN:6% 4CzPN in emitting material layer (EML), respectively. By investigating the tendency of current density change in devices with different doping ratio, we suggested that the enhancement of the current efficiency should be due to the charge transport balance improvement induced by assist dopant in EML.

We fabricated phosphorescent organic light-emitting diodes (PhOLEDs) using thermally activated delayed fluorescence (TADF) material 10,10'-(4,4'-sulfonylbis(4,1-phenylene)) bis(9,9-dimethyl-9,10-dihydroacridine) (DMAC-DPS) with low concentration, which showed better performance compared with 1,3-bis(carbazole-9-yl) benzene (mCP) based devices. When the concentration of DMAC-DPS was 1wt%, the driving voltage of the device was only 3.3 V at 1 000 cd/m2, and the efficiency and lifetime of the device were effectively improved compared with those of mCP based devices. The result indicated that DMAC-DPS could?? effectively improve the performance of phosphorescent devices. We believe that the better device performance can be attributed to the optimization of the energy transfer process in the emitter layer and lifetime of triplet excitons by DMAC-DPS. The study may provide a simple and effective strategy to achieve high-performance OLEDs.

To achieve uniform distribution of silver nano clusters (SNCs) on substrate and reveal its effect on the performance of organic light-emitting diode (OLED), the SNCs incorporated OLED was fabricated and SNCs were coated by mul-ti-step spin coating. Compared with the device without SNCs film, the brightness and current efficiency of the OLED devices with SNCs film were highly raised. The enhancement is attributed to SNCs induced local surface plasmon (LSP) oscillation, which can increase the radiative rate of excitons on Alq3 molecules.

In this paper, p-chlorophenylacetic acid and p-fluorophenylacetic acid were applied to modify the indium tin oxide (ITO) electrodes. The surface work functions of unmodified ITO, p-chlorophenylacetic acid modified ITO (Cl-ITO) and p-fluorophenylacetic acid modified ITO (F-ITO) are 5.0 eV, 5.26 eV and 5.14 eV, respectively, and the water contact angles are 7.3°, 59.1° and 46.5°, respectively. The increase of the work function makes the hole injection ability of the devices im-proved, which is proved by the hole transport devices. The self-assembly (SAM) layers transfer hydrophilic ITO to hydro-phobic ITO, which makes ITO more compatible with the hydrophobic organic layers, making the organic film more stable during the operation. After modification, the organic light emitting diodes (OLEDs), SAM-modified ITO/NPB/Alq3/LiF/Al, with better performance and stability were fabricated. Especially, the OLED with Cl-ITO (Cl-OLED) has a maximum lumi-nance of 22 428 cd/m2 (improved by 32.9%) and a half-lifetime of 46 h. Our results suggest that employing organic acids to modify ITO surface can enhance the stability and the luminescent properties of OLED devices.

为了增强激光诱导玻璃等离子体的辐射光谱信号, 采用直径为10 mm的玻璃纤维材质半球空腔对等离子体进行束缚, 对比研究了无约束和约束两种实验条件下的辐射光谱信号.由于激光的聚焦情况对玻璃等离子体特性有较大影响, 实验首先对激光在样品中的聚焦位置进行了优化, 结果表明当样品表面位于透镜焦平面以上3 mm处时激光诱导玻璃等离子体辐射光谱最强.然后采用时间分辨光谱对比研究了无约束和半球空腔约束下光谱强度的时间演变规律, 并分析了谱线强度增大倍数的时间演变, 结果表明在等离子体产生后6~15 μs的时间内, 半球空腔约束下谱线强度呈现出增强的现象, 且具有不同能级的谱线增强程度不同, 当采集延时为10 μs时具有最优增强效果.最后研究了激光能量对半球空腔约束下等离子体辐射增强效果的影响, 研究结果表明, 随着激光能量增大, 谱线增强倍数逐渐增加, 当激光能量超过170 mJ以后, 谱线增强效果开始下降.

We fabricated organic light-emitting diodes (OLEDs) with the thermally activated delayed fluorescence (TADF) material of 4CzIPN, which show better stability compared with the 4,4’-Bis(carbazol-9-yl)biphenyl (CBP) based devices. The half lifetime of the device using 4CzIPN as host material has doubled, and a slower voltage rise compared with that of CBP-based devices has been achieved, which indicates the improvement of stability. We attribute the better stability to the good film morphology and difficult crystallization property of 4CzIPN. Our results suggest that employing the 4CzIPN as host material can be a promising way of fabricating OLEDs with longer operation lifetime.

In this study, a simple spraying method is used to prepare the transparent conductive films (TCFs) based on Ag nanowires (AgNWs). Polyvinylpyrrolidone (PVP) is introduced to modify the interface of substrate. The transmittance and bending performance are improved by optimizing the number of spraying times and the solution concentration and controlling the annealing time. The spraying times of 20, the concentration of 2 mg/mL and the annealing time of 10 min are chosen to fabricate the PVP/AgNWs films. The transmittance of PVP/AgNWs films is 53.4%—67.9% at 380—780 nm, and the sheet resistance is 30 Ω/□ which is equivalent to that of commercial indium tin oxide (ITO). During cyclic bending tests to 500 cycles with bending radius of 5 mm, the changes of resistivity are negligible. The performance of PVP/AgNW transparent electrodes has little change after being exposed to the normal environment for 1 000 h. The adhesion to polymeric substrate and the ability to endure bending stress in AgNWs network films are both significantly improved by introducing PVP. Spraying method makes AgNWs form a stratified structure on large-area polymer substrates, and the vacuum annealing method is used to weld the AgNWs together at junctions and substrates, which can improve the electrical conductivity. The experimental results indicate that PVP/AgNW transparent electrodes can be used as transparent conductive electrodes in flexible organic light emitting diodes (OLEDs).

本文采用一种结构为Ag/MoO3/Ag的金属/氧化物/金属(M1/O/M2)叠层替代ITO作为OLED器件的阳极, 研究Ag/MoO3/Ag叠层结构变化对于OLED器件电极透过率、亮度、光谱等性能的影响。实验采用真空蒸镀方法制备了一系列器件, 器件结构为Ag/MoO3/Ag/MoO3(10 nm)/NPB(40 nm)/Alq3(60 nm)/LiF(1 nm)/Al(150 nm)。对比器件的电压-电流密度、电压-亮度、光谱特性等数据, 表明Ag/MoO3/Ag的结构为20/20/10(nm)时, 器件性能较好。在驱动电压为11 V时, 其亮度达到18 421 cd/m2, 电流效率为2.45 cd/A; 且因器件中存在微腔效应, 其EL光谱蓝移, 半高宽变窄。但考虑到530 nm处其电极透过率仅为17%, 所以经换算该器件实际发光亮度比ITO电极器件更高。该Ag/MoO3/Ag叠层阳极制作相对简单, 经优化后在顶发射和柔性OLED器件方面将具有一定的应用前景。

A transparent 3-mercaptopropyl trimethoxysilane (MPTMS)/Ag/MoO₃composite anode is introduced to fabricate green organic light-emitting diodes (OLEDs). Effects of the composite anode on brightness and operating voltage of OLEDs are researched. By optimizing the thickness of each layer of the MPTMS/Ag/MoO₃structure, the transmittance of MPTMS/Ag (8 nm)/MoO₃(30 nm) reaches over 75% at about 520 nm. The sheet resistance is 3.78 Ω/□, corresponding to this MPTMS/Ag (8 nm)/MoO₃(30 nm) structure. For the OLEDs with the optimized anode, the maximum electroluminescence (EL) current efficiency reaches 4.5 cd/A, and the maximum brightness is 37 036 cd/m². Moreover, the OLEDs with the optimized anode exhibit a very low operating voltage (2.6 V) for obtaining brightness of 100 cd/m². We consider that the improved device performance is mainly attributed to the enhanced hole injection resulting from the reduced hole injection barrier height. Our results indicate that employing the MPTMS/Ag/MoO₃as a composite anode can be a simple and promising technique in the fabrication of low-operating voltage and high-brightness OLEDs.